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Si nanocrystals (nc-Si) embedded in silica have recently attracted a lot of attention as a potential optoelectronic material due to their light emission at approximately 1.7 eV. Er3+ is attractive because its 1.53 micrometers emission coincides with the low attenuation region of silica optical fibers. In this paper, we report the experimental investigation of energy transfer between nc-Si and Er3+ in ion implanted material which may relax requirements on the Er3+ pump source and lead to broad-band pumped optical devices.
Constantinos E. Chryssou,Anthony J. Kenyon,T. S. Iwayama,D. E. Hole, andChristopher W. Pitt
"Photoluminescence characterization of Er3+ -implanted silica thin films containing Si nanocrystals", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); https://doi.org/10.1117/12.382846
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Constantinos E. Chryssou, Anthony J. Kenyon, T. S. Iwayama, D. E. Hole, Christopher W. Pitt, "Photoluminescence characterization of Er3+ -implanted silica thin films containing Si nanocrystals," Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); https://doi.org/10.1117/12.382846