Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode

J. Meslage; G. Pichard; M. Fragnon; M. Royer; M. Nguyen Duy; C. Boisrobert; D. Morvan

doi:10.1117/12.935176

30 November 1983 Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode

J. Meslage, G. Pichard, M. Fragnon, M. Royer, M. Nguyen Duy, C. Boisrobert, D. Morvan

Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935176
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

The particular Cd0.7 Hg0.3Te band structure:almost equality of band gap and spin orbit splitting, provides good ionization properties to this alloy : a high ionization coefficients ratio is expected. The devices elaboration is made by planar technology. A N+/N/P+ structure is achieved by ions implantation followed by a diffusion process. A diffused guard ring allows to avoid surface and junction edge effects. The I (V) characteristic shows a breakdown voltage (VB) of about 100 V. The dark current at 0.95 VB, amounts 100nA.Photodiodes sensitivity is typiclly of 0.7. A/W when M=1.Multiplication coefficients as high as 40 have been measured, the photoresponse spatial homogeneity in gain mode has been also controlled with a lOμm size spot : no microplasma effect have been observed. Photodetectors sensitivity, measured at 500 MHz, remains identical in avalanche operating mode. Good linearity is obtained when plotting P-N schottky noise versus light intensity No excess noise was observed. The study of the avalanche photodiode noise, synchronous with 1.3. μm DEL emission, at 30 MHz with a 1 MHz bandwith has been carried out in relation to the multiplication factor, and has led to an estimation of the ionization coefficient ratio.

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J. Meslage, G. Pichard, M. Fragnon, M. Royer, M. Nguyen Duy, C. Boisrobert, and D. Morvan "Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); https://doi.org/10.1117/12.935176

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KEYWORDS

Tellurium

Ionization

Mercury

Diodes

Mercury cadmium telluride

Avalanche photodetectors

Avalanche photodiodes

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