Paper
15 May 2000 Thinned charged-coupled devices with flat focal planes for UV imaging
Todd J. Jones, Peter W. Deelman, S. T. Elliott, Paula J. Grunthaner, R. Wilson, Shouleh Nikzad
Author Affiliations +
Abstract
A versatile post-fabrication process to produce thinned, flat, back-illuminated charge-coupled devices (CCDs) has been developed at Jet Propulsion Laboratory's Microdevices Laboratory. This technique is compatible with many ultraviolet enhancement treatments and has been demonstrated with the delta doping process. The significance of this demonstration is that thinned, robust, and flat CCDs are produced without the use of epoxies or waxes using temperatures and materials that are compatible with standard CCD fabrication and delta doping processes. In our approach, the CCD is attached by thermocompression bonding to a specially-designed silicon substrate using gold-gold diffusion bonding prior to thinning. CCDs with optically flat membranes (10 - 20 micrometers ) were produced with excellent yield. These flat CCDs have been successfully delta doped. We will discuss the process of producing thinned flat CCDs, their delta doping, and our results to date.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Todd J. Jones, Peter W. Deelman, S. T. Elliott, Paula J. Grunthaner, R. Wilson, and Shouleh Nikzad "Thinned charged-coupled devices with flat focal planes for UV imaging", Proc. SPIE 3965, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications, (15 May 2000); https://doi.org/10.1117/12.385472
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Charge-coupled devices

Silicon

Doping

Etching

Ultraviolet radiation

Gold

Back illuminated sensors

RELATED CONTENT

Flash Technology for CCD Imaging in the UV
Proceedings of SPIE (December 10 1986)
2048 pixel front illuminated linear CCD for spectroscopy
Proceedings of SPIE (August 06 2009)
Ultrastable and uniform EUV and UV detectors
Proceedings of SPIE (December 18 2000)
Megapixel CCD thinning/backside progress at SAIC
Proceedings of SPIE (July 01 1991)
Diffusion dark current in CCDs and CMOS image sensors
Proceedings of SPIE (February 29 2008)

Back to Top