Nanoscale simulation of indium phosphide epitaxy by molecular beam

Jean Flicstein; D. Maisonneuve; E. Guillonneau; Jean Francois Palmier; Jean Christophe Harmand; F. Barthe; Jean Marie Moison

doi:10.1117/12.378175

25 February 2000 Nanoscale simulation of indium phosphide epitaxy by molecular beam

Jean Flicstein, D. Maisonneuve, E. Guillonneau, Jean Francois Palmier, Jean Christophe Harmand, F. Barthe, Jean Marie Moison

Author Affiliations +

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378175
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

Real-time Monte Carlo Molecular Dynamics (MC-MD) simulation techniques have been developed to model the nucleation, the initial stages of growth, and thin film growth, during InP Molecular Beam Epitaxy (MBE) on InP. The simulation mode includes tetrahedral lattice coordination, species-species interactions out to third-nearest neighbor, heterogeneous photolysis of precursors molecules on vacuum UV, adspecies migration on the lattice, nucleation on conventional and charge activated centers, and desorption dynamic effects. An InP homoepitaxy system, permits the simulator validation against MBE experimental results; although the model and the corresponding simulator are easily applied to a variety of other problems. The amount of InP epitaxy as a function of time is obtained over surface are of 50 X 50 atomic sites. The result of the simulations demonstrate that model treatment is accurate and encompasses several improvements over previous treatments. The agreement between experimental and simulated roughness serves to build confidence in the use of Mc-MD for MBE studies.

Citation Download Citation

Jean Flicstein, D. Maisonneuve, E. Guillonneau, Jean Francois Palmier, Jean Christophe Harmand, F. Barthe, and Jean Marie Moison "Nanoscale simulation of indium phosphide epitaxy by molecular beam", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378175

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Monte Carlo methods

Computer simulations

Epitaxy

3D modeling

Molecular beam epitaxy

Optical simulations

Indium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years