Impulse response of metal-semiconductor-metal photodetector at high energy level of optical illumination

Stanislav V. Averine; Yuen Chuen Chan; Seng Lee Ng; Remy Sachot; Yee Loy Lam

doi:10.1117/12.406407

15 December 2000 Impulse response of metal-semiconductor-metal photodetector at high energy level of optical illumination

Stanislav V. Averine, Yuen Chuen Chan, Seng Lee Ng, Remy Sachot, Yee Loy Lam

Author Affiliations +

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406407
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

A two-dimensional self-consistent time-dependent simulation technique has been used to investigate electron-hole transport processes in the active region of metal-semiconductor-metal photodiode structures (MSM-PD) and to analyze their high-speed response at different energy levels of the optical illumination. Charge accumulation and screening of the dark electric field at high optical excitation levels greatly modify the drift conditions of the photogenerated electrons and holes in the active region of the MSM-PD. This effect gives rise to impulse response distortion and reduced bandwidth and efficiency. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed. The conditions under which screening of the internal field has no effect on the MSM-PD response are formulated. Modeling data are compared with experimental results.

Citation Download Citation

Stanislav V. Averine, Yuen Chuen Chan, Seng Lee Ng, Remy Sachot, and Yee Loy Lam "Impulse response of metal-semiconductor-metal photodetector at high energy level of optical illumination", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406407

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