Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance

M. E. Constantino; B. Salazar-Hernandez

doi:10.1117/12.406452

15 December 2000 Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance

M. E. Constantino, B. Salazar-Hernandez

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406452
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz-Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heteromterface is larger than that of the hcmointerface.

Citation Download Citation

M. E. Constantino and B. Salazar-Hernandez "Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406452

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