GaN-based terahertz sources

Vladimir I. Litvinov; Vladimir A. Manasson; Lev S. Sadovnik

doi:10.1117/12.422138

18 December 2000 GaN-based terahertz sources

Vladimir I. Litvinov, Vladimir A. Manasson, Lev S. Sadovnik

Author Affiliations +

Proceedings Volume 4111, Terahertz and Gigahertz Electronics and Photonics II; (2000) https://doi.org/10.1117/12.422138
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

We discuss possible new sub-millimeter sources based on group-III Nitrides superlattices. It is shown that traveling dipole domains in biased GaN/InGaN and GaN/AlGaN short- period superlattices can generate electromagnetic power in the terahertz region.

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Vladimir I. Litvinov, Vladimir A. Manasson, and Lev S. Sadovnik "GaN-based terahertz sources", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); https://doi.org/10.1117/12.422138

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