320 x 240 microbolometer uncooled IRFPA development

Jean-Luc Tissot; Jean-Luc Martin; Eric Mottin; Michel Vilain; Jean-Jacques Yon; Jean-Pierre Chatard

doi:10.1117/12.409888

15 December 2000 320 x 240 microbolometer uncooled IRFPA development

Jean-Luc Tissot, Jean-Luc Martin, Eric Mottin, Michel Vilain, Jean-Jacques Yon, Jean-Pierre Chatard

Proceedings Volume 4130, Infrared Technology and Applications XXVI; (2000) https://doi.org/10.1117/12.409888
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

LETI LIR has been involved in amorphous silicon uncooled microbolometer development for a few years. This silicon IR detection is now well mastered and matured so that industrial transfer LETI/LIR technology is performed towards Sofradir. Industrial production of 320x240 microbolometer array with 45 micrometers pitch is now started. After a short description of the technology and the readout circuit architecture we focus on device reliability which is the key point for microbolometer application. Methodology for reliability enhancement is described. First results obtained on amorphous silicon reliability are presented. Electro-optical results obtained from an IRCMOS 320x240 with 45 micrometers pitch are presented. NEDT close to 70 mK can be obtained with our standard microbolometer amorphous silicon technology.

Citation Download Citation

Jean-Luc Tissot, Jean-Luc Martin, Eric Mottin, Michel Vilain, Jean-Jacques Yon, and Jean-Pierre Chatard "320 x 240 microbolometer uncooled IRFPA development", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409888

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