Paper
15 December 2000 Application of Schottky barrier bolometer arrays to cooled sensors
Author Affiliations +
Abstract
We describe a model for cooled thermal imaging sensors, based on silicon Schottky diode bolometer arrays. The sensing mechanism is the modulation of Schottky diode dark current with temperature. The proposed array is identical to Schottky diode arrays, which would be used for uncooled thermal imaging, except for a change of the sensing electrode metal. We separate the thermal and electrical response of the detector elements and discuss sensor limitations related to detector thermal isolation. At a 180 K operating temperature, we project NEDT's in the 3 to 20 mK range, depending upon system f/number. A 20 cm aperture sensor based on this technology should have a noise equivalent power below 10-11 watts.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Freeman D. Shepherd and James E. Murguia "Application of Schottky barrier bolometer arrays to cooled sensors", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409850
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Diodes

Thermography

Bolometers

Temperature metrology

Signal to noise ratio

Silicon

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