Ablation plasma ion implantation: experiments and theory

Ronald M. Gilgenbach; Bo Qi; Yue Ying Lau; Mark W. Johnston; L. M. Wang; Gary L. Doll; Alexi Laxarides

doi:10.1117/12.428008

29 May 2001 Ablation plasma ion implantation: experiments and theory

Ronald M. Gilgenbach, Bo Qi, Yue Ying Lau, Mark W. Johnston, L. M. Wang, Gary L. Doll, Alexi Laxarides

Proceedings Volume 4276, Commercial and Biomedical Applications of Ultrashort Pulse Lasers; Laser Plasma Generation and Diagnostics; (2001) https://doi.org/10.1117/12.428008
Event: Photonics West 2001 - LASE, 2001, San Jose, CA, United States

Abstract

Research is underway to accelerate laser ablation plume ions for implantation (APII) into substrate. Ablation plasma ion implantation biases the deposition substrate by a large negative voltage pulse. APII has the advantages of direct acceleration and implantation of ions from metals or any other solid targets. This process is environmentally benign because it avoids the use of toxic gaseous precursors. Initial experiments are directed towards the implantation of iron ions into silicon substrates at negative voltages up to -10 kV.

Citation Download Citation

Ronald M. Gilgenbach, Bo Qi, Yue Ying Lau, Mark W. Johnston, L. M. Wang, Gary L. Doll, and Alexi Laxarides "Ablation plasma ion implantation: experiments and theory", Proc. SPIE 4276, Commercial and Biomedical Applications of Ultrashort Pulse Lasers; Laser Plasma Generation and Diagnostics, (29 May 2001); https://doi.org/10.1117/12.428008

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