Paper
14 September 2001 Effect of hole shape error on lithography process window
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Abstract
Intra-field lens aberrations and distortions affect the shape of contact hole patterning. This effect is more severe with defocus. In this paper, we have studied the effect of difference in horizontal and vertical diameter of a contact hole on the lithography process window for different illumination conditions using a 0.68NA step and scan system. It is found that the depth of focus (DOF) for 0.22um contact hole patterning shrinks considerably taking into account the horizontal and vertical diameter measurements as compared to the average diameter measurements alone.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rakesh Kumar, Moitreyee Mukherjee-Roy, and Cher-Huan Tan "Effect of hole shape error on lithography process window", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435672
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KEYWORDS
Lithography

Optical lithography

Semiconducting wafers

Critical dimension metrology

Image quality

Lithographic illumination

Photomasks

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