Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography

Takashi Matsunaga; Tatsuo Enami; Kouji Kakizaki; Takashi Saito; Satoshi Tanaka; Hiroaki Nakarai; Toyoharu Inoue; Tatsushi Igarashi

doi:10.1117/12.435703

14 September 2001 Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography

Takashi Matsunaga, Tatsuo Enami, Kouji Kakizaki, Takashi Saito, Satoshi Tanaka, Hiroaki Nakarai, Toyoharu Inoue, Tatsushi Igarashi

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435703
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

KrF excimer laser lithography has applications for the less-than-130-nm-design rule by improving the exposure technology, i.e., super-resolution technology. We therefore developed a 4-kHz KrF excimer laser which corresponds to the next generation's high throughput and high number of aperture (NA) scanner requirements, and achieved low cost of operation (CoO) for this light source for mass production uses. We estimated the basic performance requirements of our device, and developed the necessary high repetition rate operation technology that corresponds to a high throughput scanner, and achieved 4-kHz/30-W laser output. We also developed pulse stretching technology for ultra line narrowing, which can accommodate the high NA lens, and achieved more than 30 ns pulse width (Tis). We can thus expect less than 0.45-pm spectral bandwidth (FWHM). Moreover, the relation of the repetition rate operation and main module life was evaluated, and the optimal repetition frequency, which considers CoO, was adopted.

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Takashi Matsunaga, Tatsuo Enami, Kouji Kakizaki, Takashi Saito, Satoshi Tanaka, Hiroaki Nakarai, Toyoharu Inoue, and Tatsushi Igarashi "Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435703

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