Distributed Bragg-Reflector PbSnTe/PbSeTe Diode Lasers

E. Kapon; A. Katzir

doi:10.1117/12.937425

26 November 1983 Distributed Bragg-Reflector PbSnTe/PbSeTe Diode Lasers

E. Kapon, A. Katzir

Proceedings Volume 0438, Tunable Diode Laser Development and Spectroscopy Applications; (1983) https://doi.org/10.1117/12.937425
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Distributed Bragg-reflector (DBR) diode lasers were fabricated from lattice-matched Pb0.817Sn0.183 Te/PbSe0.08Te0.92 wafers grown by liquid phase epitaxy. The DBR lasers operated within a limited range of heat-sink temperatures, 8.5°-38°K, with threshold current density of 3kA/cm2 at 20°K. Single longitudinal-mode operation was obtained up to more than three times the threshold current. The DBR lasers exhibited continuous tuning range of 6 cm-1 near 775 cm-1 (12.9 μm). The average tuning rate was 0.21 cm-1/°K and was much smal-ler than that of the corresponding Fabry-Perot lasers, which was 2.3 cm-1/°K.

Citation Download Citation

E. Kapon and A. Katzir "Distributed Bragg-Reflector PbSnTe/PbSeTe Diode Lasers", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937425

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