Reticle cleaning process for 130-nm lithography and beyond

Hitoshi Handa; Masumi Takahashi; Hisatsugu Shirai

doi:10.1117/12.438393

5 September 2001 Reticle cleaning process for 130-nm lithography and beyond

Hitoshi Handa, Masumi Takahashi, Hisatsugu Shirai

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438393
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

Three cleaning methods were examined to check their strong points. Cleaning results were analyzed from the aspects on removal of particles and chemicals. Starlight inspection results showed that conventional wet cleaning based on chemicals, such as H₂SO₄ and NH₄OH, could remain small particles on chrome-oxide (CrO_X). DUV irradiation could assist this traditional SC-1 (mixture of NH₄OH and H₂O₂ and H_{H(subscript 2}O) cleaning in removing these sticking particles. Electrolyzed water, contained anode and cathode water, showed same tendency as SC-1 treatment, which could easily attract particles to CrO_X surface. Mechanism of particle removal and attraction was considered from the aspect on electrostatic reaction between particles and photomask surface. ArF ((lambda) =193nm) lithography could cloud quartz surface with crystallized substances. Analytical results implied that they had been generated by optical-chemical reaction between ArF light and chemical residue after cleaning. Experimental results showed that DUV treatment before cleaning was effective to prevent reticle surface from chemical contamination. From the above knowledge, suggestion about reticle cleaning process for ArF lithography is described as a conclusion.

Citation Download Citation

Hitoshi Handa, Masumi Takahashi, and Hisatsugu Shirai "Reticle cleaning process for 130-nm lithography and beyond", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438393

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