Paper
10 April 2001 Optical and electrical low-frequency noise of ridge waveguide InGaAsP/InP MQW lasers
Saulius Smetona, John G. Simmons, John D. Evans, Sandra Pralgauskaite, Jonas Matukas, Vilius Palenskis
Author Affiliations +
Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425479
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
A detail study of both the optical and electrical low- frequency noise spectra and their correlation factor of graded-index separate-confinement-heterostructure, multiple quantum well strained-layer Fabri-Perot and distributed- feedback InGaAsP/InP laser diodes has been carried out under the wide current and temperature ranges. A particular attention was concentrated to the investigation of optical and electrical fluctuations due to the mode hopping effect, which was observed at specific forward currents and temperatures. Both electrical and optical noises at mode hopping areas have the Lorentzian type spectrum, and are very strongly correlated and very sensitive to temperature and facet reflectivity.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saulius Smetona, John G. Simmons, John D. Evans, Sandra Pralgauskaite, Jonas Matukas, and Vilius Palenskis "Optical and electrical low-frequency noise of ridge waveguide InGaAsP/InP MQW lasers", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425479
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Cited by 2 scholarly publications.
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KEYWORDS
Waveguide lasers

Waveguides

Laser optics

Quantum wells

Reflectivity

Semiconductor lasers

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