Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells

Vladimir M. Aroutiounian; K. R. Maroutyan; A. L. Zatikyan; C. Levy-Clement; Kenell J. Touryan

doi:10.1117/12.448266

13 November 2001 Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells

Vladimir M. Aroutiounian, K. R. Maroutyan, A. L. Zatikyan, C. Levy-Clement, Kenell J. Touryan

Author Affiliations +

Proceedings Volume 4458, Solar and Switching Materials; (2001) https://doi.org/10.1117/12.448266
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

A method was developed for the theoretical calculation of the reflectance for the antireflection coatings made of porous silicon. Although porous silicon has been the focus of interest for the past years, still a satisfactory concept for calculating the reflectance features is lacking. Towards this end, we suggest a new concept that is a combination of the optical matrix method and a graded-bandgap model of porous silicon, which takes into account the gradient in porosity. The calculations based on the optical matrix method were carried out for common antireflection coatings, as well, for MgF₂, ZnS and Ta₂O₅ in order to prove feasibility of the method. A rather good agreement with experimental data was found for all types of antireflection coatings. It is shown that the model of porous silicon as a graded-band semiconductor is valid and is a handy method for the reflectance calculation for porous silicon.

Citation Download Citation

Vladimir M. Aroutiounian, K. R. Maroutyan, A. L. Zatikyan, C. Levy-Clement, and Kenell J. Touryan "Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells", Proc. SPIE 4458, Solar and Switching Materials, (13 November 2001); https://doi.org/10.1117/12.448266

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