Paper
10 May 1984 Optically Pumped Semiconductor Laser Material
R. G. Waters, S. R. Chinn, B. D. Schwartz
Author Affiliations +
Abstract
The results of an investigation of optically pumped double-heterostructure lasers are reported. Threshold power densities of ≈8-35 kW cm-2 and a total power efficiency of ≈10% have been measured. Gain spectra have been derived from the data for several pumping configurations. Photogenerated carrier concentrations have also been calculated from the spectra. Current injection devices have been fabricated to assess the utility of this method for predicting lasing wavelengths and threshold current densities.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. G. Waters, S. R. Chinn, and B. D. Schwartz "Optically Pumped Semiconductor Laser Material", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939286
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical pumping

Wafer-level optics

Absorption

Semiconductors

Cameras

Semiconducting wafers

Spectroscopy

Back to Top