Optically Pumped Semiconductor Laser Material

R. G. Waters; S. R. Chinn; B. D. Schwartz

doi:10.1117/12.939286

10 May 1984 Optically Pumped Semiconductor Laser Material

R. G. Waters, S. R. Chinn, B. D. Schwartz

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939286
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

The results of an investigation of optically pumped double-heterostructure lasers are reported. Threshold power densities of ≈8-35 kW cm-2 and a total power efficiency of ≈10% have been measured. Gain spectra have been derived from the data for several pumping configurations. Photogenerated carrier concentrations have also been calculated from the spectra. Current injection devices have been fabricated to assess the utility of this method for predicting lasing wavelengths and threshold current densities.

Citation Download Citation

R. G. Waters, S. R. Chinn, and B. D. Schwartz "Optically Pumped Semiconductor Laser Material", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939286

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