Important aspects of volume NLO crystal growth for optoelectronic devices

Eugene G. Tsvetkov; Victor I. Tyurikov; Vladimir N. Semenenko

doi:10.1117/12.444976

19 October 2001 Important aspects of volume NLO crystal growth for opto-electronic devices

Eugene G. Tsvetkov, Victor I. Tyurikov, Vladimir N. Semenenko

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444976
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

Some aspects of growth of volume nonlinear-optical KTP and BBO single crystals, specific features of formation of their real structure and its characteristics have been studied. They can be governed by such phenomena as formation and restructuring of adsorption layers at the interface of crystal growth, their possible directing and screening effect on solution-melt clusters, mechanism of formation of the polarity of crystal structure, etc. The most important factor is the tendency to form antipolar structures of these crystals, caused by internal energy reasons. It is shown that for developing efficient technological processes for production of this type of crystals, in addition to the above factors, real processes of temperature-time changes in structure and properties of complex solution-melt crystallization media must be also taken into account.

Citation Download Citation

Eugene G. Tsvetkov, Victor I. Tyurikov, and Vladimir N. Semenenko "Important aspects of volume NLO crystal growth for opto-electronic devices", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444976

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