UV Laser-Induced Radical-Etching For Microelectronic Processing

G L Loper; M D Tabat

doi:10.1117/12.939446

14 June 1984 UV Laser-Induced Radical-Etching For Microelectronic Processing

G L Loper, M D Tabat

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939446
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

This paper reports work towards the development of new UV laser-induced radical-etching processes for the efficient and selective removal of: (1) polycrystalline (poly)-silicon layers deposited on silicon dioxide substrates, (2) tungsten layers deposited on either silicon or silicon dioxide substrates, and (3) silicon dioxide layers deposited on either silicon or aluminum substrates.

Citation Download Citation

G L Loper and M D Tabat "UV Laser-Induced Radical-Etching For Microelectronic Processing", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939446

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