Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes

Miyako Matsui; Mari Nozoe; Keiko Arauchi; Atsuko Takafuji; Hidetoshi Nishiyama; Yasushi Goto

doi:10.1117/12.473499

16 July 2002 Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes

Miyako Matsui, Mari Nozoe, Keiko Arauchi, Atsuko Takafuji, Hidetoshi Nishiyama, Yasushi Goto

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473499
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

We developed a technique using electron beams for inspection contact holes immediately after dry etching and detecting incomplete contact failures. Wafers with deep-sub-micron contact \holes that had high-aspect-ratios of 10 could be detected during practical inspection time by controlling the charging effect on the wafer surfaces. Measurements of the energy distribution in the secondary electronics exhausted from the bottom of the holes indicated that they were accelerated by the charge up voltage on the wafer surfaces. Our analysis showed that high-density electron beams must be used to charge the surfaces when the aspect ratio is high. The minimum thickness of the residual SiO₂ that could be detected at the bottom of the contact holes was 2 nm using an aspect ratio of 8. Applying this mechanism to optimize the dry etching process in semiconductor manufacturing showed that we could achieve reliable process control.

Citation Download Citation

Miyako Matsui, Mari Nozoe, Keiko Arauchi, Atsuko Takafuji, Hidetoshi Nishiyama, and Yasushi Goto "Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473499

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