Automated SEM metrology of wafers printed using a SCAA mask

Sunil Desai; Takeaki Ebihara; David Levenson; Sylvia White

doi:10.1117/12.473415

16 July 2002 Automated SEM metrology of wafers printed using a SCAA mask

Sunil Desai, Takeaki Ebihara, David Levenson, Sylvia White

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473415
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The massive amount of data necessary to qualify a new 100nm generation technology can be efficiency collected using a CD-SEM and analyzed using Klarity ProData. By comparing the linewidths, space widths, and pitches printed in resists with different focus, exposure does, and numerical aperture with the measured reticle parameters, one can be determine optimal processing conditions and the required biasing rules for the new technology. The Sidewall Chrome Alternating Aperture Mask, a next generation alternating phase shift mask structure, is especially suitable for this as all relevant mask features are visible from the top surface which, however, is not planar and thus can confuse optical mask inspection tools. Resist patterns with line-space pitches from 220nm to 800nm and isolated lines - as well as the reticle - were measured sing a KLA-Tencor 8250 CD-SEM and analyzed with ProData. At the isofocal dose, the 70nm line - 150nm space reticle pattern printed with equal 110 nm lines and spaces at NA equals 0.63 on a Canon FPA-5000 ES3 248 nm step and scan tool, with a process window that overlapped those of less dense approximately 100 nm features.

Citation Download Citation

Sunil Desai, Takeaki Ebihara, David Levenson, and Sylvia White "Automated SEM metrology of wafers printed using a SCAA mask", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473415

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