Exposing the DUV SCAAM: 75-nm imaging on the cheap

David Levenson; Takeaki Ebihara

doi:10.1117/12.475666

12 July 2002 Exposing the DUV SCAAM: 75-nm imaging on the cheap

David Levenson, Takeaki Ebihara

Author Affiliations +

Proceedings Volume 4692, Design, Process Integration, and Characterization for Microelectronics; (2002) https://doi.org/10.1117/12.475666
Event: Design, Process Integration, and Characterization for Microelectronics, 2002, Santa Clara, CA, United States

Abstract

Multiple exposure alternating phase-shifting mask lithography can exploit economies of scale to lower total manufacturing cost if chip designers adhere to simple rules, some of which also would apply to dipole illumination and other sub-wavelength lithography systems. The most promising system employs the Sidewall Chrome Alternating Aperture Mask structure which fulfills the theoretical expectations of strong phase-shift optics and offers the potential for low cost sub-100nm imaging with 248nm light. It has already printed 73nm semi-dense lines with 248nm light at k1 equals 0.19 and demonstrated a useful common processing window for less dense and isolated structures.

Citation Download Citation

David Levenson and Takeaki Ebihara "Exposing the DUV SCAAM: 75-nm imaging on the cheap", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475666

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE