Microwave-Frequency Intensity-Modulation And Gain-Switching In Semiconductor Injection Lasers

Chinlon Lin

doi:10.1117/12.942606

1 November 1987 Microwave-Frequency Intensity-Modulation And Gain-Switching In Semiconductor Injection Lasers

Chinlon Lin

Proceedings Volume 0477, Optical Technology for Microwave Applications I; (1987) https://doi.org/10.1117/12.942606
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

This paper is a brief rev4.ew of the characteristics of semiconductor lasers under microwave-frequency direct intensity-modulation, and multi-gigahertz gain-switching. The role of biasdependent resonance frequency and -3 dB rolloff frequency in multi-gigabit/sec digital modulation is discussed. The intrinsic transient effects of spectral envelope broadening and dynamic line broadening (frequency-chirping) on the single-longitudinal-mode operation of high-speed directly modulated semiconductor lasers are also discussed.

Citation Download Citation

Chinlon Lin "Microwave-Frequency Intensity-Modulation And Gain-Switching In Semiconductor Injection Lasers", Proc. SPIE 0477, Optical Technology for Microwave Applications I, (1 November 1987); https://doi.org/10.1117/12.942606

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