Studies of behavior of hydrogen in fused silica by ion beam analysis technique

Shinji Nagata; Bun Tsuchiya; K. Toh; N. Ohtsu; Tsunemi Kakuta; Naoki Shamoto; Tatsuo Shikama

doi:10.1117/12.451744

26 November 2002 Studies of behavior of hydrogen in fused silica by ion beam analysis technique

Shinji Nagata, Bun Tsuchiya, K. Toh, N. Ohtsu, Tsunemi Kakuta, Naoki Shamoto, Tatsuo Shikama

Proceedings Volume 4786, Penetrating Radiation Systems and Applications IV; (2002) https://doi.org/10.1117/12.451744
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Retention and thermal release behavior of hydrogen isotopes in fused silica, synthesized silica and optical fibers were investigated by ion beam analysis technique. Initially contained H in the interior of the specimens is about 0.1~0.2 at.% at room temperature, irrespective of the nominal value of OH concentration. Besides, H atoms more than 1 x 10¹⁶H/cm² was found at the surface. The thermal release of the H atoms from the interior was affected by re-trapping at the near surface. During 5 keV ion injection, the retained D in the implanted layer was quickly saturated with a concentration of about 1 x 10²¹D/cm³. Under the subsequent D injection to doses above 1 x 10¹⁸D/cm², D atoms were trapped with a concentration about 1 at.% in the depth far beyond the projected ranges of D ions. Thermal release of D in the injected layer started at lower temperature than that from the larger depth for lower implantation dose, while the two release curves close to each other for the higher dose. Irradiation of 10 keV He ion into the fused silica caused H up-take in the He implanted depth, where no He atoms were retained.

Citation Download Citation

Shinji Nagata, Bun Tsuchiya, K. Toh, N. Ohtsu, Tsunemi Kakuta, Naoki Shamoto, and Tatsuo Shikama "Studies of behavior of hydrogen in fused silica by ion beam analysis technique", Proc. SPIE 4786, Penetrating Radiation Systems and Applications IV, (26 November 2002); https://doi.org/10.1117/12.451744

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