Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications

Eckard Deichsel; Peter Unger

doi:10.1117/12.482207

5 September 2002 Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications

Eckard Deichsel, Peter Unger

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482207
Event: Photonics Asia, 2002, Shanghai, China

Abstract

A dry-etching process for laser fabrication with vertical, smooth, and flat facets was developed. Using this optimized chemically assisted ion-beam etching (CAIBE) process, unstable-resonator lasers were fabricated and investigated. Such a device exhibits an optical output power of 1.3W at 2A pump current without thermal roll over or catastrophic optical mirror damage (COMD). A differential quantum efficiency of 60% and a threshold current density of 225A/cm2 was measured. Virtual source sizes are in the range of 5 µm (FWHM). More than 80% of the intensity of the virtual sources is included in the main lobe. The position of the virtual source inside the laser is located 340?345 µm behind the output facet and almost independent on pumping current. The brightness of such laser devices is about one order of magnitude higher than the brightness of broad-area lasers and therefore suitable for single-mode ber coupling.

Citation Download Citation

Eckard Deichsel and Peter Unger "Semiconductor unstable-resonator laser diodes for high-power and high-brightness applications", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482207

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