Spectral reflectance tuning of EUV mirrors for metrology applications

Sergiy A. Yulin; Thomas Kuhlmann; Torsten Feigl; Norbert Kaiser

doi:10.1117/12.482644

16 June 2003 Spectral reflectance tuning of EUV mirrors for metrology applications

Sergiy A. Yulin, Thomas Kuhlmann, Torsten Feigl, Norbert Kaiser

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.482644
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Mo/Si multilayer mirrors with as well an increased as a reduced bandwidth in their spectral and angular reflectance have been designed and deposited for the wavelength about 13.5 nm. For the broadband mirrors, a non-periodic multilayer design based on the thickness optimization of each layer by a stochastic method is compared to a desing that consists of 3 different monoperiodic stacks. In addition, narrowband multilayer mirrors with a significantly reduced bandwidth based on high order reflection have been designed and fabricated. A near-normal peak reflectivity of more than 20% and 30% were achieved for the broadband mirros in the wavelength range from 13 nm to 15 nm and the incidence angles from 0° to 20°, respectively. The decrease of FWHM for Mo/Si mirrors from 0.5 nm to 0.07 nm was shown for suggested narrowband design. Both the increase and the reduction of the reflection bandwidth are unavoidably connected with a decrease of peak reflectivity. Therefore, the application of such mirrors involves areas where a maximum peak reflectivity is not required, e.g. in EUV spectroscopy, radiation filtration and for the characterization of EUV sources. Furthermore, the use of such mirrors in combination with a broadband plasma source will result in a higher integral reflectivity.

Citation Download Citation

Sergiy A. Yulin, Thomas Kuhlmann, Torsten Feigl, and Norbert Kaiser "Spectral reflectance tuning of EUV mirrors for metrology applications", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.482644

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