Paper
26 June 2003 Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection-lens aberrations: an initial study
Abstract
We have set up a series of experiments to evaluate the Litel In-Situ Interferometer (ISI) for measuring projection-lens aberrations of lithographic exposure tools. The current paper describes the results we obtained so far. We believe the ISI is an excellent tool.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter De Bisschop "Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection-lens aberrations: an initial study", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485525
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Cited by 7 scholarly publications.
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KEYWORDS
Semiconducting wafers

Monochromatic aberrations

Reticles

Overlay metrology

Lithography

Interferometers

Spherical lenses

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