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In this paper, the samples of CuSc1-xMgxO2 thin films were deposited on the quartz glass substrates, using a CuSc0.93Mg0.07O2 target, by rf sputtering at 120 W with a 2.0 Pa mixture gas of oxygen and argon. The gas ratio (O2/Ar) was set to 0.0, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, 1.0. The characterization of the films was carried out using a X-ray photoelectron spectroscopy (XPS) and a X-Ray diffraction (XRD). It was found that the as-deposited films were amorphous and the Mg stoichiometry in the CuSc1-xMgxO2 thin films decreased with the increase of the ratio of O2 to Ar, the amorphous samples with the Mg=0.01 to 0.04 had conductivity of 0.015 S/cm; after postprocessing of the samples were by rapid thermal annealing (RTA) at 950 °C for 3 min. in a flowing Ar atmosphere, the samples were crystal structure with preferred (101) panel orientation but it is difficult to determine that the crystal form was of a hexagonal 2H-polytype or 3R, the oxygen stoichiometry was lower than 2, the conductivity of the RTA films varied from 0.92 to 3.8 S/cm; after oxygen was intercalated to the RTA samples under oxygen pressure of 8.0 atm. at 500 °C for 10 min., the oxygen intercalated samples had a higher conductivity than that of the RTA samples, but the transmittance of the films in the wavelength of 190-780 nm was much lower than that of the as-deposited and the RTA samples. The Seebeck coefficient showed that the conductive samples were p-type. The results obtained were discussed.
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