Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique

Toshinori Matsushima; Takeshi Yasuda; Katsuhiko Fujita; Tetsuo Tsutsui

doi:10.1117/12.505509

17 November 2003 Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique

Toshinori Matsushima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Author Affiliations +

Proceedings Volume 5217, Organic Field Effect Transistors II; (2003) https://doi.org/10.1117/12.505509
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

High field-effect hole mobility of (formula available in paper)and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (formula available in paper)prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (formula available in paper)films prepared on the octadecyltrichlorosilane-covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (formula available in paper)structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (formula available in paper)films via a same sequence of preparation of (formula available in paper)and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (formula available in paper)structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered (formula available in paper)dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (formula available in paper)have achieved above-described high performance in organic-inorganic hybrid transistors.

Citation Download Citation

Toshinori Matsushima, Takeshi Yasuda, Katsuhiko Fujita, and Tetsuo Tsutsui "Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique", Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); https://doi.org/10.1117/12.505509

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available