Scatterometry for contact hole lithography

Kelly A. Barry; Anita Viswanathan; Xinhui Niu; Joerg Bischoff

doi:10.1117/12.536057

24 May 2004 Scatterometry for contact hole lithography

Kelly A. Barry, Anita Viswanathan, Xinhui Niu, Joerg Bischoff

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536057
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Scatterometry has been most commonly applied to CD metrology of line/space grating structures. However, for the process development and control of 3D structures for contact hole lithography applications, the current metrology methods of CD-SEM, electrical CD (ECD) and/or cross-sectional SEM (X-SEM) produce the desired information either (a) as an incomplete solution, (b) too late in process flow, or (c) in a destructive manner. In this paper, we will present use cases for the application of scatterometry to 3D structures, i.e., post-lithography hole/space patterns, where measurements of CD, profile, and film thickness can be made immediately following the lithography process, in a method nondestructive to the wafer. These use cases demonstrate the capability of 3D metrology integrated onto a TEL Clean Track platform, where a Therma-Wave reflectometer was used to generate spectra that were then processed via Timbre ODP, for a film stack of patterned photoresist (PR), anti-reflective coating (ARC), and oxide on top of a silicon (Si) substrate. Focus-Exposure Matrix (FEM) wafers have also been produced in order to characterize the contact hole profile and CD variation as a result of changing focus and exposure conditions. The results of the experiment show that ODP can be used successfully to monitor CD, film thickness, and profile variation, providing a valuable solution to contact hole lithography. Tool precision and matching results are also shown, which indicate the stability of the measurement process, and correlation to CD-SEM is also provided as a reference metrology. These results suggest that integrated 3D scatterometry is a viable production metrology solution, enabling the progression toward Advanced Process Control (APC).

Citation Download Citation

Kelly A. Barry, Anita Viswanathan, Xinhui Niu, and Joerg Bischoff "Scatterometry for contact hole lithography", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536057

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