Development of RF MEMS phase shifters using polymer and ferroelectric thin film

Taeksoo Ji; Hargsoon Yoon; K. A. Jose; Vijay K. Varadan

doi:10.1117/12.548433

29 July 2004 Development of RF MEMS phase shifters using polymer and ferroelectric thin film

Taeksoo Ji, Hargsoon Yoon, K. A. Jose, Vijay K. Varadan

Proceedings Volume 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology; (2004) https://doi.org/10.1117/12.548433
Event: Smart Structures and Materials, 2004, San Diego, CA, United States

Abstract

High performance of RF MEMS phase shifters using polymer bridges and ferroelectric thin film has been demonstrated in this research. To reduce the operating voltage for the RF MEMS phase shifters, polymer bridges and ferroelectric thin film have been implemented. The phase shifter fabricated on a quartz substrate is capable of continuous change in phase up to about 90o (at 15 GHz) with a maximum actuation voltage of 20V. Using polymer as the bridge materials contributes to the reduction in actuation voltage due to their low Young's modulus.

Citation Download Citation

Taeksoo Ji, Hargsoon Yoon, K. A. Jose, and Vijay K. Varadan "Development of RF MEMS phase shifters using polymer and ferroelectric thin film", Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); https://doi.org/10.1117/12.548433

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