Paper
20 August 2004 Photomask with interior nonprinting phase-shifting window for printing small post structures
Yung-Tin Chen
Author Affiliations +
Abstract
We have developed a new mask technology to print small structures for three-dimensional integrated circuits. Aspects of the new technique provide for a novel photo mask for patterning small post features for an integrated circuit. The photo mask includes masked features having interior nonprinting windows. The interior nonprinting window is a phase shifter, while the area surrounding the masked features transmits light un-shifted. Thus any arrangement of features can be patterned with no phase conflict. In this paper, we will present a study of printing small post structures with pitch smaller than 0.26 μm by currently available KrF photolithography. Both alternating and chrome-less phase shifting masks are used to test the resolution limit. Resolution capability of various OAI techniques such as annular and quadrupole are analyzed by simulation and wafer printing images. This new photo mask with interior nonprinting phase-shifting window provides great improvement for resolving small post structures which having limited process window due to 2-D optical interference effects.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yung-Tin Chen "Photomask with interior nonprinting phase-shifting window for printing small post structures", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557752
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KEYWORDS
Photomasks

Phase shifts

Printing

Integrated circuits

Phase shifting

Optical lithography

Semiconducting wafers

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