Paper
20 October 2004 Chip-scale thermal management of high-brightness LED packages
Mehmet Arik, Stanton Weaver
Author Affiliations +
Abstract
The efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. Light emitting diodes, LEDs, are a strong candidate for the next generation, general illumination applications. LEDs are making great strides in terms of lumen performance and reliability, however the barrier to widespread use in general illumination still remains the cost or $/Lumen. LED packaging designers are pushing the LED performance to its limits. This is resulting in increased drive currents, and thus the need for lower thermal resistance packaging designs. As the power density continues to rise, the integrity of the package electrical and thermal interconnect becomes extremely important. Experimental results with high brightness LED packages show that chip attachment defects can cause significant thermal gradients across the LED chips leading to premature failures. A numerical study was also carried out with parametric models to understand the chip active layer temperature profile variation due to the bump defects. Finite element techniques were utilized to evaluate the effects of localized hot spots at the chip active layer. The importance of “zero defects” in one of the more popular interconnect schemes; the “epi down” soldered flip chip configuration is investigated and demonstrated.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mehmet Arik and Stanton Weaver "Chip-scale thermal management of high-brightness LED packages", Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); https://doi.org/10.1117/12.566061
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CITATIONS
Cited by 81 scholarly publications and 7 patents.
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KEYWORDS
Light emitting diodes

Infrared imaging

Thermography

Packaging

Reliability

Silicon carbide

Sapphire

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