Facet oxidation and degradation of AlGaAs/GaAs pulsed laser diodes

Rodica V. Ghita; Mihail F. Lazarescu; A. Stefan Manea; C. Logofatu; Eugen Vasile; Victor Ciupina

doi:10.1117/12.582822

21 October 2004 Facet oxidation and degradation of AlGaAs/GaAs pulsed laser diodes

Rodica V. Ghita, Mihail F. Lazarescu, A. Stefan Manea, C. Logofatu, Eugen Vasile, Victor Ciupina

Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.582822
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania

Abstract

Oxide films grow in atmosphere as a result of oxidation reaction and mass transport of the element through the oxide film. In most III-V compounds (as GaAs) semiconductor oxides of III-element and V-element are formed individually. The AlGaAs/GaAs laser diodes were exposed to facet oxidation at mirror surfaces in normal environmental conditions for a storage process. It was observed a decrease of optical output power in the early stage of experiment together with a constancy of the ratio P/P(O) for the long time term (month). We suggest the development at the mirror laser facet of a natural oxide film as Ga₂O₃ and GaAsO. We present a SEM (Scanning Electron Microscopy) image of a natural oxide film grown in atmosphere at the surface of AlGaAs as laser facet, as well as a picture of a facet oxidation of a laser device. The EDS (Electron Dispersion Spectrum) of a natural oxide put into evidence the O (Kα) signal. Dielectric coating using Al2O3 and a-Si layers protected a part of laser devices, and at the mirror surface a reflectivity of 70% in the emission range of the laser (890 nm) was measured. The emitted power for dielectric coated devices was constant, so the rapid degradation process was slowed down.

Citation Download Citation

Rodica V. Ghita, Mihail F. Lazarescu, A. Stefan Manea, C. Logofatu, Eugen Vasile, and Victor Ciupina "Facet oxidation and degradation of AlGaAs/GaAs pulsed laser diodes", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); https://doi.org/10.1117/12.582822

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