Synthesis and characterization of InP and Ga203 nanowires

Zhanghua Han; Fei Wang; Erik Forsberg; Xia Cao

doi:10.1117/12.581371

31 January 2005 Synthesis and characterization of InP and Ga₂0₃ nanowires

Zhanghua Han, Fei Wang, Erik Forsberg, Xia Cao

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.581371
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

We report on the synthesis and characterization of crystalline InP and Ga₂O₃ nanowires. The nanowires are synthesized using a simple method based on vapor-liquid-solid (VLS) growth; a method we believe could form the basis of cheap and simple fabrication of crystalline nanowires of a broad range of semiconductor materials, including III-V compounds and semiconductor oxides. The reported InP nanowires have an average diameter of 30nm and the Ga₂O₃ nanowires diameters down to 100nm. Characterization data including SEM, XRD, TEM and PL are presented.

Citation Download Citation

Zhanghua Han, Fei Wang, Erik Forsberg, and Xia Cao "Synthesis and characterization of InP and Ga₂0₃ nanowires", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.581371

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