(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers

B. Damilano; J. Barjon; M. Hugues; J.-Y. Duboz; J. Massies; J.-M. Ulloa; M. Montes; A. Hierro

doi:10.1117/12.608752

7 July 2005 (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers

B. Damilano, J. Barjon, M. Hugues, J.-Y. Duboz, J. Massies, J.-M. Ulloa, M. Montes, A. Hierro

Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.608752
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

A lot of progress have been recently realized concerning the laser performances at 1.3 μm. However, extending the emission of (Ga,In)(N,As) lasers above 1.3 μm with good performances is still challenging, since it is reported that the threshold current density significantly increases. In order to extend the lasing wavelength above 1.3 μm, while keeping good laser characteristics, we have optimized the growth of (Ga,In)(N,As)/GaAs quantum wells (QWs) grown by molecular beam epitaxy in view of realizing laser structures. During the growth of a laser structure the QW is "self"-annealed due to the growth of the upper AlGaAs cladding layer at high temperature. It is important to know the effect of this self-annealing on the QW optical properties. For that purpose, we have realized in situ thermal annealing on QWs grown at different temperatures and with different nitrogen composition. Separate confinement hetero-structure laser diodes with a single In_0.4Ga_0.6As_1-xN_x (x=0.015, 0.021 and 0.033)/GaAs QW have been grown, combining a low growth temperature and a high in situ annealing temperature. The broad area devices have a room temperature threshold current density of 1500 A/cm² and emit around 1.34 μm just above threshold. Furthermore, increasing the nitrogen composition extends the lasing operation up to 1.44 μm with a threshold of 1755 A/cm² and even to 1.52μm with a 4060A/cm² threshold.

Citation Download Citation

B. Damilano, J. Barjon, M. Hugues, J.-Y. Duboz, J. Massies, J.-M. Ulloa, M. Montes, and A. Hierro "(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.608752

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum wells

Annealing

Nitrogen

Laser damage threshold

Gallium arsenide

Gallium

Temperature metrology

Show All Keywords

Keywords/Phrases

Search In:

Publication Years