Si infrared pixelless photonic emitter

V. K. Malyutenko; V. V. Bogatyrenko; O. Yu. Malyutenko; S. V. Chyrchyk

doi:10.1117/12.622104

29 September 2005 Si infrared pixelless photonic emitter

V. K. Malyutenko, V. V. Bogatyrenko, O. Yu. Malyutenko, S. V. Chyrchyk

Proceedings Volume 5957, Infrared Photoelectronics; 59570D (2005) https://doi.org/10.1117/12.622104
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

We report on basic principle and technology of Si high-temperature (T>300K) IR emitter based on all optical down conversion concept. The approach is based on the possibility to modulate semiconductor thermal emission power in the spectral range of intra-band electron transitions through shorter wavelength (inter-band transitions) optical pumping (light down conversion process). Device emission bands are matched to transparency windows in atmosphere (3-5 μm and 8-12 μm) by adjusting thin film coat parameters. The carrier lifetime is responsible for the device time response whereas its maximum power emitted (mW-range) activates with temperature increase. One of the major advantages of devices employing optical "read in" technology is that they are free of contacts and junctions, thus making them ideal for operation at high temperatures.

Citation Download Citation

V. K. Malyutenko, V. V. Bogatyrenko, O. Yu. Malyutenko, and S. V. Chyrchyk "Si infrared pixelless photonic emitter", Proc. SPIE 5957, Infrared Photoelectronics, 59570D (29 September 2005); https://doi.org/10.1117/12.622104

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