Co<sub>2</sub>MnSi growth on semiconductor substrate by double-beams pulsed laser deposition

Michel L. Autric; Eric Valerio; Cristiana E. Grigorescu

doi:10.1117/12.625689

19 October 2005 Co₂MnSi growth on semiconductor substrate by double-beams pulsed laser deposition

Michel L. Autric, Eric Valerio, Cristiana E. Grigorescu

Proceedings Volume 5958, Lasers and Applications; 59582M (2005) https://doi.org/10.1117/12.625689
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

This present work concerns the growth and the characterization of Co₂MnSi thin films deposited onto GaAs substrates. Two PLD configurations have been explored, the conventional 1-Beam-PLD and the 2-Crossed-Beams-PLD one. We demonstrated that, with 1B-PLD conditions, we got Co₂MnSi polycrystalline structure with unwanted droplets. The 2CB-PLD allowed us to get droplet-free, single crystalline thin films at substrate temperature as low as 353 K.

Citation Download Citation

Michel L. Autric, Eric Valerio, and Cristiana E. Grigorescu "Co₂MnSi growth on semiconductor substrate by double-beams pulsed laser deposition", Proc. SPIE 5958, Lasers and Applications, 59582M (19 October 2005); https://doi.org/10.1117/12.625689

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