Ion-assisted deposition of SiO2 film from silicon

Tuan.H. Pham; Cu. X. Dang

doi:10.1117/12.625021

5 October 2005 Ion assisted deposition of SiO₂ film from silicon

Tuan.H. Pham, Cu. X. Dang

Proceedings Volume 5963, Advances in Optical Thin Films II; 59631U (2005) https://doi.org/10.1117/12.625021
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Silicon dioxide, SiO₂, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO₂ granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO₂ film with good and stable property.

Citation Download Citation

Tuan.H. Pham and Cu. X. Dang "Ion assisted deposition of SiO₂ film from silicon", Proc. SPIE 5963, Advances in Optical Thin Films II, 59631U (5 October 2005); https://doi.org/10.1117/12.625021

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