Paper
28 February 2006 Accurate modeling of gain and amplified spontaneous emission in super-luminescent LEDs
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Abstract
A super-luminescent light emitting diode (SLED) operating around 1300nm is simulated. This edge-emitting device is grown on an InP substrate and comprises multiple quantum wells. For the simulation the focus is put on the amplified spontaneous emission (ASE) spectra for different input currents as well as on the output power vs. current curves (light vs. current---LI). Simulated ASE spectra agree very well with measurements over a large wavelength range (more than 80nm). Regarding the LI-characteristics good agreement between simulations and measurements is obtained for input currents from 10mA up to 150mA. The simulated electrical characteristics of the device are obtained by solving drift-diffusion equations, the optical problem is solved by decomposing the vectorial (3D) Helmholtz equation into a transverse and into a longitudinal part.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Loeser, Lorenzo Occhi, Valerio Laino, and Bernd Witzigmann "Accurate modeling of gain and amplified spontaneous emission in super-luminescent LEDs", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151Z (28 February 2006); https://doi.org/10.1117/12.645039
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Cited by 4 scholarly publications.
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KEYWORDS
Hole burning spectroscopy

Light emitting diodes

Quantum wells

Reflectivity

3D modeling

Laser damage threshold

Optical simulations

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