Paper
9 June 2006 AlN thin films prepared by DC arc deposition
Hai-feng Liang, Yi-xin Yan, Shu-fan Miao
Author Affiliations +
Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61492N (2006) https://doi.org/10.1117/12.674289
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
Many researchers are interested in AlN films because of their novel thermal, chemical, mechanical, acoustic, and optical properties. Many methodsincluding such as DC/RF sputtering, chemical vapor deposition (CVD), laser chemical vapor deposition(LCVD), molecular beam epitaxy (MBE), thermal vapor deposition, can be used to prepare AlN films. In this paper, a new method, DC arc deposition, is used to deposite AlN films. It is an anti-reflective, protective film on optical elements. FTIR are used to determine the ALN structure and measure the transmittance spectrum. Ellipsometry is used to determine the films' refractive index, extinction index and thickness. The films' anti-wear properties are tested by pin-on-disc way and the anti-corrosion(anti-acid, anti-alkali, anti-salt) properties are also tested. The results show that the films is AlN films by the 670cm-1 typical peak, the films' extinction index is near to zero in the range of visible and infrared waveband, the films' refractive index is varied from 1.7 to 2.1 at range of visible and infrared waveband. The films have better anti-wear, anti-acid and anti-alkali properties, but their anti-salt properties are not good.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hai-feng Liang, Yi-xin Yan, and Shu-fan Miao "AlN thin films prepared by DC arc deposition", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492N (9 June 2006); https://doi.org/10.1117/12.674289
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KEYWORDS
Aluminum nitride

Refractive index

Silicon

Infrared radiation

Chemical vapor deposition

Ellipsometry

Aluminum

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