Ultra sensitive silicon sensor for passive millimeter wave imaging

Nathan Bluzer

doi:10.1117/12.669667

19 May 2006 Ultra sensitive silicon sensor for passive millimeter wave imaging

Nathan Bluzer

Proceedings Volume 6211, Passive Millimeter-Wave Imaging Technology IX; 62110H (2006) https://doi.org/10.1117/12.669667
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

The Ultra Sensitive Silicon Sensor¹ is an all silicon bolometer that utilizing active thermal isolation to overcome limitations in conventional bolometers. Inherently, bolometers are slower and less sensitive than quantum detectors. However, because of low cost and room temperature operation, bolometers are being used in many cameras. IC technology used for producing staring focal planes has ameliorated the bolometer's slow speed and lower sensitivity issues. Better thermal isolation and thermal responsivity materials have yielded significant sensitivity improvements. Currently, LWIR bolometer's sensitivity is about 10X below the theoretical limit. Achieving theoretical sensitivity will greatly increase the application sphere of bolometer cameras. Theoretically, performance improvements are possible with better thermal isolation, better thermal responsivity, and a faster time constant. Examining these limitations has allowed us to formulate solutions to these problems and open the opportunity for application of bolometers to MMwave imaging. Large (10X) sensitivity improvements are possible by replacing passive thermal isolation with active thermal isolation. Active thermal isolation utilizes electro-thermal feedback to greatly improve thermal isolation and this leads directly to corresponding responsivity improvements. Improved thermal isolation does increase the thermal time constant, however, this increase is offset by using microantennas and/or microlenses. A detail analysis is presented on the theoretical operation of the all silicon USSS bolometer.

Citation Download Citation

Nathan Bluzer "Ultra sensitive silicon sensor for passive millimeter wave imaging", Proc. SPIE 6211, Passive Millimeter-Wave Imaging Technology IX, 62110H (19 May 2006); https://doi.org/10.1117/12.669667

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
15 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Bolometers

Sensors

Amplifiers

Silicon

Chromium

Interference (communication)

Electroluminescence

Show All Keywords

Keywords/Phrases

Search In:

Publication Years