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The reasons of experimentally observed in 2H- and 4H-politypes of layer semiconductor PbI2 anomalous
temperature-depending behavior of the exciton absorption bands in the low-temperature region have been
investigated. The influence of the weak exciton-phonon interaction of quadratic energy dispersion of Vanier-
Mott's exciton with the nondisperse optical, and both the low-energy optical and acoustic bending-wave type
phonons there has been considered. It was shown that the low-temperature dynamics of an exciton absorption peak
shift in 2H-politype of the lead iodide crystals is related with the concurrent influence of two exciton energy
relaxation mechanisms - on both the bending waves and the lattice optical phonons, but in the case of 4H-politype - the influence of the low-energy optical phonons must be taken into account.
N. K. Kramar,V. M. Kramar, andYu. M. Kachmarskii
"Temperature genesis of an exciton absorption band in 2H- and 4H-politypes of PBI2", Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541B (14 June 2006); https://doi.org/10.1117/12.679946
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N. K. Kramar, V. M. Kramar, Yu. M. Kachmarskii, "Temperature genesis of an exciton absorption band in 2H- and 4H-politypes of PBI2," Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541B (14 June 2006); https://doi.org/10.1117/12.679946