Doped GaSe nonlinear crystals

Alexander A. Tikhomirov; Yuri M. Andreev; Gregory V. Lanskii; Olga V. Voevodina; Sergey Yu. Sarkisov

doi:10.1117/12.677065

9 June 2006 Doped GaSe nonlinear crystals

Alexander A. Tikhomirov, Yuri M. Andreev, Gregory V. Lanskii, Olga V. Voevodina, Sergey Yu. Sarkisov

Author Affiliations +

Proceedings Volume 6258, ICONO 2005: Novel Photonics Materials: Physics and Optical Diagnostics of Nanostructures; 625809 (2006) https://doi.org/10.1117/12.677065
Event: ICONO 2005, 2005, St. Petersburg, Russian Federation

Abstract

The physical properties of pure GaSe and the crystals doped with 0.01÷3% Al, In, Te, and S have been observed comparatively to reveal the potentials for frequency conversion of laser emission. It has been shown that GaSe:S(greater than or equal to 3%) is the most promising material for practical applications.

Citation Download Citation

Alexander A. Tikhomirov, Yuri M. Andreev, Gregory V. Lanskii, Olga V. Voevodina, and Sergey Yu. Sarkisov "Doped GaSe nonlinear crystals", Proc. SPIE 6258, ICONO 2005: Novel Photonics Materials: Physics and Optical Diagnostics of Nanostructures, 625809 (9 June 2006); https://doi.org/10.1117/12.677065

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