Paper
30 August 2006 Measurements of electron mobility-lifetime product and surface recombination velocity of Cd1-xZnxTe radiaton detectors for different surface processing conditions
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Abstract
We explored the dependence of electron mobility-lifetime product (μτ) and surface recombination velocity ( S/μ) on surface processing and temperature for Cd1-xZnxTe (CZT) radiation detectors. The surfaces of the CZT crystals were mechanically polished and then chemically etched with 2% bromine-in-methanol. Different regions at the Au contacts were illuminated with light at a wavelength of 650-, 800-, 900-, and 940-nm. The position-dependent and temperature- dependent values of the electron mobility-lifetime product and surface recombination velocity were measured using a direct current (DC) photoconductivity technique. The study revealed that this technique is a valuable and practical method to measure the spatial- and temperature-variations of the surface recombination velocity and bulk lifetime for CZT detectors. We discuss the correlation between the DC photoconductivity and measurements of the detector performance.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yunlong Cui, Michael Groza, Utpal N. Roy, Arnold Burger, and Ralph B. James "Measurements of electron mobility-lifetime product and surface recombination velocity of Cd1-xZnxTe radiaton detectors for different surface processing conditions", Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 63190C (30 August 2006); https://doi.org/10.1117/12.682356
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Surface finishing

Crystals

Sensor performance

Gamma radiation

Polishing

Gold

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