45-32-nm node photomask technology with water immersion lithography

Takashi Adachi; Yuichi Inazuki; Takanori Sutou; Yasutaka Morikawa; Nobuhito Toyama; Hiroshi Mohri; Naoya Hayashi

doi:10.1117/12.689740

20 October 2006 45-32-nm node photomask technology with water immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6349, Photomask Technology 2006; 63493J (2006) https://doi.org/10.1117/12.689740
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

As for 32-nm node (minimum half pitch 45-nm) logic device of the next generation, the leading semiconductor device makers propose the following three kinds of lithography techniques as a candidate, multi-exposure with water immersion lithography. So we will evaluate them. In previous work, we evaluated the resolution limit and printing performance through various pitches of 45-nm node (minimum half pitch 65-nm) lithography. We evaluated the alternate aperture phase shift mask(alt-PSM) of NA=0.93 (dry and immersion) and various resolution enhancement technologies (RETs) with off-axis and polarized illumination of NA=1.07(water immersion). The minimum k1 examined at previous time was 0.31 and 0.39 respectively. To achieve 32-nm node of the next generation with water immersion lithography, we must use higher NA but yet severe k1. The combination of the strong RET, polarization and multi-exposure is thought to be required. In order to resolve severe k1 (<0.3), the double patterning is thought as a promising candidate technology, though the disadvantageous points will appear such as very severe alignment accuracy and the twice process of wafer. In this report, we will discuss some RETs such as double dipole lithography(DDL), double patterning lithography(DPL) and alt-PSM that have sufficient printing performance through various pitches of 32-nm node. We evaluate the effect and the performance of the selected lithography side RETs and mask material RETs for each, using optical simulation software.

Citation Download Citation

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, and Naoya Hayashi "45-32-nm node photomask technology with water immersion lithography", Proc. SPIE 6349, Photomask Technology 2006, 63493J (20 October 2006); https://doi.org/10.1117/12.689740

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available