A study of the NEA photocathode activation technique on a [GaAs(Zn):Cs]: O-Cs model

Wenli Liu; Hui Wang; Benkang Chang; Jijun Zou; Zhi Yang; Pin Gao; Rongguo Fu; Yunsheng Qian

doi:10.1117/12.688317

6 October 2006 A study of the NEA photocathode activation technique on a [GaAs(Zn):Cs]: O-Cs model

Wenli Liu, Hui Wang, Benkang Chang, Jijun Zou, Zhi Yang, Pin Gao, Rongguo Fu, Yunsheng Qian

Author Affiliations +

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63523A (2006) https://doi.org/10.1117/12.688317
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

In this paper we review simply the surface models. These models have several technical problems not solved appropriately except for having deficiency themselves. So we present a new negative electron affinity (NEA) photocathode photoelectric emission model: [GaAs (Zn): Cs]: O - Cs. After discussing photocathodes activation technique on the model, we design a activation technique, which increases the Cs current to decrease the first peak in appropriate degree after using smaller Cs current to achieve the first peak of photoemission (GaAs (Zn)-Cs dipole layer), then set out Cs-O alternation and do not end the technique until gaining maximal photoemission (Cs-O-Cs dipole layer), in the photocathodes with GaAs (Zn) (100)2×4 reconstruction surface. In the present material configuration and level of technique, it is difficult that the integral sensitivity of cathode excess 3500 μA/lm. However, it is likely to excess 4000 μA/lm by varied doping As-rich GaAs (Zn) (100)2×4 reconstruction surface.

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Wenli Liu, Hui Wang, Benkang Chang, Jijun Zou, Zhi Yang, Pin Gao, Rongguo Fu, and Yunsheng Qian "A study of the NEA photocathode activation technique on a [GaAs(Zn):Cs]: O-Cs model", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523A (6 October 2006); https://doi.org/10.1117/12.688317

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