Light down-conversion process in Si with >100% external efficiency

V. K. Malyutenko; V. V. Bogatyrenko

doi:10.1117/12.686672

12 October 2006 Light down-conversion process in Si with >100% external efficiency

V. K. Malyutenko, V. V. Bogatyrenko

Author Affiliations +

Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636805 (2006) https://doi.org/10.1117/12.686672
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

We report on the fundamentals and technology of Si-based linear all-optical light down-conversion process. The approach is in the possibility to enhance the thermal emission power of semiconductors in the spectral range of intraband electron transitions (mid- and long-wave infrared, free carrier absorption band) by the shorter wavelength optical pump (interband transitions, visible to near-infrared, fundamental absorption band). We experimentally realize conditions (the 1.15-μm-pump wavelength and 2 to 16-μm-signal wavelengths, T ≈ 500 K) when Si-based device demonstrated 220 % external power efficiency. As a matter of fact, we come up with new concept for high-temperature incoherent light amplifier (optical transistor) made of indirect bandgap semiconductors.

Citation Download Citation

V. K. Malyutenko and V. V. Bogatyrenko "Light down-conversion process in Si with >100% external efficiency", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636805 (12 October 2006); https://doi.org/10.1117/12.686672

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