1/f noise in the dark current of GaN QWIPs

Amanda M. Hall; Peter H. Handel

doi:10.1117/12.703263

8 February 2007 1/f noise in the dark current of GaN QWIPs

Amanda M. Hall, Peter H. Handel

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64731O (2007) https://doi.org/10.1117/12.703263
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The dark current of Quantum Well Inter-subband Photodetectors is affected by 1/f noise that limits the detectivity. This paper applies for the first time conventional quantum 1/f noise expressions to calculate the expected level of 1/f noise in QWIPs and applies the resulting engineering formulas to the case of GaInAs/InP and GaN/AlGaN QWIPs. Both the collisionless and collision-dominated cases are considered. The elementary process causing the dark current is the transfer of an electron from one well to the neighboring well. This happens under the influence of the applied electric field, and has in general both thermally activated and tunneling components. The larger the applied electric field, the larger is the squared velocity change of the carriers, and the larger is the obtained conventional quantum 1/f effect. The detectivity of the devices is calculated on this basis. Quantum well intersubband photodetectors (QWIPs) can be extended in principle from infrared into the THz region.

Citation Download Citation

Amanda M. Hall and Peter H. Handel "1/f noise in the dark current of GaN QWIPs", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731O (8 February 2007); https://doi.org/10.1117/12.703263

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