Barrier Height of Thin-Film (25-200A) PtSi-Si Schottky Diodes

W Cabanski; M Schulz

doi:10.1117/12.938556

22 November 1986 Barrier Height of Thin-Film (25-200Å) PtSi-Si Schottky Diodes

W Cabanski, M Schulz

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938556
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

±We have performed a detailed study of the barrier height of PtSi/p-Si Schottky diodes with thicknesses ranging from 25 to 200Å. The hole photocurrent was measured by using irradiation through cooled (70K) narrow band (▵λ : 0,14μm) irinterference filters in the spectral range from 3,0 to 5,4 μm. The photocurrent is analysed as a function of the reverse bias voltage to determine the barrier height by the Schottky effect. The flat band barrier is determined to (1)BFB = 0,257 eV ± 8 meV independent of PtSi thickness. The scatter due to fabrication processes (sputtering or evaporating of Pt and annealing) is only + 7meV. The temperature dependence of the barrier follows the temperature variation of the Si bandgap in the range 20 to 100K. The tight pinning of the barrier height and the photo-excitation process are discussed in the light of interface states at the PtSi-Si interface.

Citation Download Citation

W Cabanski and M Schulz "Barrier Height of Thin-Film (25-200Å) PtSi-Si Schottky Diodes", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938556

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